Overcoming challenges of futuristic transistor technology below 5nm node

To scale down a transistor below a 5nm node is one of the vital concerns for VLSI industry as there are various challenges due to the shrinking of components. Several researches are going on worldwide to overcome the challenges of future technology nodes. Among them, this article reviews the potential transistor structures and materials like Carbon Nano-tube FET, Gate-All-Around FET, and Compound Semiconductors as solutions to overcome the problems of scaling the existing silicon FinFET transistor below 5nm node.

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